inchange semiconductor isc product specification isc silicon pnp power transistor BD706 description dc current gain - : h fe = 40(min.)@ i c = - 0.5a collector-emitter sustaining voltage- : v ceo(sus) = -45v(min.) complement to type bd705 applications designed for use in power linear and switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -45 v v ces collector-emitter voltage v be = 0 -45 v v ceo collector-emitter voltage -45 v v ebo emitter-base voltage -5 v i c collector current-continuous -12 a i b b base current-continuous -5 a p c collector power dissipation @ t c =25 75 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.67 /w r th j-a thermal resistance, junction to ambient 70 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor BD706 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v ceo(sus) collector-emitter sustaining voltage i c = -100ma; i b = 0 -45 v v ce( sat ) collector-emitter saturation voltage i c = -4a; i b = -0.4a b -1.0 v v be( on ) base-emitter on voltage i c = -4a; v ce = -4v -1.5 v i ceo collector cutoff current v ce = -22v; i b = 0 b -1.0 ma i cbo collector cutoff current v cb = -45v; i e = 0 v cb = -45v; i e = 0; t c = 150 -0.1 -1.0 ma i ebo emitter cutoff current v eb = -5v; i c = 0 -1.0 ma h fe-1 dc current gain i c = -0.5a; v ce = -2v 40 400 h fe-2 dc current gain i c = -2a; v ce = -2v 30 h fe-3 dc current gain i c = -4a; v ce = -4v 20 150 h fe-4 dc current gain i c = -10a; v ce = -4v 5 f t current-gain?bandwidth product i c = -0.3a; v ce = -3v 3 mhz isc website www.iscsemi.cn 2
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